The I RF B4227PBF is a product from Infineon Technologies, a global leader in semiconductor solutions.
1. Pin Function Specifications and Packaging Type
Package Type:The IRFB4227PBF is housed in the TO-220 package, which is a commonly used package for power transistor s. It typically has three main terminals for power and control purposes.
2. Pin Function List:
Here is the detailed pinout and corresponding function for the IRFB4227PBF in the TO-220 package:
Pin Number Pin Name Pin Function Description Pin 1 Gate The Gate terminal (G) is used to control the switching of the MOSFET. It needs a voltage signal to turn the transistor on or off. A positive voltage above the threshold voltage (V_GS(th)) will turn the MOSFET on. Pin 2 Drain The Drain terminal (D) is the primary power input and is where the voltage or load is applied. When the MOSFET is on, current flows from the Drain to the Source. Pin 3 Source The Source terminal (S) is the reference point for the Gate and Drain voltages. It is typically connected to the ground in a low-side switch configuration. Current flows from the Source to the Drain when the MOSFET is turned on.3. Principle of Operation
The IRFB4227PBF is a N-channel MOSFET. The main function of a MOSFET is to act as a switch for electrical signals and power. It has three main terminals: Gate (G), Drain (D), and Source (S).
When a positive voltage is applied to the Gate relative to the Source, it creates an electric field that allows current to flow between the Drain and Source. The MOSFET remains off (no current flow) when the Gate voltage is below a certain threshold.
This MOSFET is ideal for switching applications because it can handle high current and voltage. It is commonly used in power conversion circuits, motor control, and other high-power applications.
4. FAQ - Common Questions for IRFB4227PBF
1. What is the maximum Gate threshold voltage for the IRFB4227PBF? The Gate threshold voltage (V_GS(th)) for the IRFB4227PBF is between 1V and 3V. 2. What is the maximum drain-to-source voltage (V_DSS) for the IRFB4227PBF? The maximum V_DSS is 55V for the IRFB4227PBF. 3. What is the maximum continuous drain current (I_D) for the IRFB4227PBF? The maximum continuous drain current is 80A for the IRFB4227PBF under appropriate cooling conditions. 4. Can the IRFB4227PBF be used in low-voltage circuits? No, the IRFB4227PBF is designed for medium- to high-voltage applications, with a maximum voltage rating of 55V. 5. What is the power dissipation capability of the IRFB4227PBF? The maximum power dissipation for the IRFB4227PBF is 125W. 6. What is the gate charge (Qg) for the IRFB4227PBF? The total Gate charge (Qg) for the IRFB4227PBF is approximately 140nC. 7. Is the IRFB4227PBF suitable for high-speed switching applications? Yes, the IRFB4227PBF is suitable for high-speed switching applications, and it has low Gate charge, allowing for fast switching. 8. What is the R_DS(on) of the IRFB4227PBF? The RDS(on) (on-state resistance) is typically 0.005 ohms at VGS = 10V. 9. What is the package type for the IRFB4227PBF? The IRFB4227PBF is in the TO-220 package. 10. Can the IRFB4227PBF be used for power supplies? Yes, the IRFB4227PBF can be used in power supplies, particularly in switching applications where high current and low R_DS(on) are needed. 11. What is the recommended Gate drive voltage for the IRFB4227PBF? The recommended Gate drive voltage for the IRFB4227PBF is 10V. 12. What is the thermal resistance (junction-to-case) for the IRFB4227PBF? The thermal resistance from junction to case is 2.5°C/W. 13. What is the maximum junction temperature for the IRFB4227PBF? The maximum junction temperature is 150°C for the IRFB4227PBF. 14. What is the body diode forward voltage drop for the IRFB4227PBF? The body diode forward voltage drop is typically 1.4V. 15. What type of MOSFET is the IRFB4227PBF? The IRFB4227PBF is an N-channel MOSFET. 16. Can the IRFB4227PBF be used in motor control circuits? Yes, the IRFB4227PBF is ideal for motor control circuits due to its high current handling and low switching losses. 17. What is the total Gate charge (Qg) for the IRFB4227PBF at 10V? The total Gate charge (Qg) at 10V is typically 140nC. 18. What is the drain-to-source breakdown voltage for the IRFB4227PBF? The breakdown voltage is 55V for the IRFB4227PBF. 19. What is the rise time and fall time for the IRFB4227PBF? The rise time (tr) is approximately 45ns, and the fall time (tf) is around 25ns. 20. Can the IRFB4227PBF be used for automotive applications? Yes, the IRFB4227PBF can be used in automotive applications, as it is designed to handle high currents and is capable of high-efficiency operation in such environments.Summary
The IRFB4227PBF is a high-performance N-channel MOSFET with a TO-220 package, commonly used in power applications such as motor controls and power supplies. It features low on-resistance (R_DS(on)), high drain current handling (80A), and fast switching capabilities.